收藏本站
ESDR0502B
IEC 61000 ? 4 ? 2 Spec.
Test First Peak
Voltage Current
Level (kV) (A)
Current at
30 ns (A)
Current at
60 ns (A)
I peak
100%
90%
IEC61000 ? 4 ? 2 Waveform
1
2
7.5
4
2
2
3
4
4
6
8
15
22.5
30
8
12
16
4
6
8
I @ 30 ns
I @ 60 ns
10%
t P = 0.7 ns to 1 ns
Figure 3. IEC61000 ? 4 ? 2 Spec
ESD Gun
TVS
Oscilloscope
50 W
50 W
Cable
Figure 4. Diagram of ESD Test Setup
The following is taken from Application Note
AND8308/D ? Interpretation of Datasheet Parameters
for ESD Devices.
ESD Voltage Clamping
For sensitive circuit elements it is important to limit the
voltage that an IC will be exposed to during an ESD event
to as low a voltage as possible. The ESD clamping voltage
is the voltage drop across the ESD protection diode during
an ESD event per the IEC61000 ? 4 ? 2 waveform. Since the
IEC61000 ? 4 ? 2 was written as a pass/fail spec for larger
systems such as cell phones or laptop computers it is not
clearly defined in the spec how to specify a clamping voltage
at the device level. ON Semiconductor has developed a way
to examine the entire voltage waveform across the ESD
protection diode over the time domain of an ESD pulse in the
form of an oscilloscope screenshot, which can be found on
the datasheets for all ESD protection diodes. For more
information on how ON Semiconductor creates these
screenshots and how to interpret them please refer to
AND8307/D.
100
90
80
70
60
50
40
30
20
10
t r
t P
PEAK VALUE I RSM @ 8 m s
PULSE WIDTH (t P ) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8 m s
HALF VALUE I RSM /2 @ 20 m s
0
0
20
40
60
80
t, TIME ( m s)
Figure 5. 8 X 20 m s Pulse Waveform
http://onsemi.com
3
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
ESDR0502NMUTBG TVS ARRAY LOW CAP 6UDFN
ESDR0524SMUTAG IC ESD PROT LOW CAP 4CH 10UDFN
ESDR0544MDMR4G 4 CHAN LOW CAP ESD MICRO-10
ESM K12 1 5N C L130 SWITCH PUSH SPST-NO 0.1A 30V
EVN2000C SWTCH TOP ROLLR PLUNGR SNAP SPDT
EVQ-PE105K SWITCH TACTILE SPST-NO 0.05A 12V
EVQ-PJX05M SWITCH TACTILE SPST-NO 0.05A 12V
EVQ-QXT03W SWITCH TACTILE SPST-NO 0.02A 15V
相关代理商/技术参数
ESDR0502N 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Ultra Low Capacitance ESD Protection Array for High Speed Data Line Protection
ESDR0502NMUTAG 功能描述:TVS二极管阵列 RoHS:否 制造商:Littelfuse 极性: 通道:4 Channels 击穿电压: 钳位电压:11.5 V 工作电压:2.5 V 峰值浪涌电流:20 A 安装风格:SMD/SMT 端接类型:SMD/SMT 系列: 最小工作温度:- 40 C 最大工作温度:+ 85 C
ESDR0502NMUTBG 功能描述:TVS二极管阵列 LOW CAP TVS ARRAY RoHS:否 制造商:Littelfuse 极性: 通道:4 Channels 击穿电压: 钳位电压:11.5 V 工作电压:2.5 V 峰值浪涌电流:20 A 安装风格:SMD/SMT 端接类型:SMD/SMT 系列: 最小工作温度:- 40 C 最大工作温度:+ 85 C
ESDR0524 制造商:ON 功能描述:designed to protect high speed data lines from ESD
ESDR0524PMUTAG 功能描述:ESD 抑制器 1Ch 15V Clamping 5V 0.3pF RoHS:否 制造商:STMicroelectronics 通道:8 Channels 击穿电压:8 V 电容:45 pF 端接类型:SMD/SMT 封装 / 箱体:uQFN-16 功率耗散 Pd: 工作温度范围:- 40 C to + 85 C
ESDR0524SMUTAG 功能描述:TVS二极管阵列 4 CHAN LOW CAP ESD PROT RoHS:否 制造商:Littelfuse 极性: 通道:4 Channels 击穿电压: 钳位电压:11.5 V 工作电压:2.5 V 峰值浪涌电流:20 A 安装风格:SMD/SMT 端接类型:SMD/SMT 系列: 最小工作温度:- 40 C 最大工作温度:+ 85 C
ESDR0544MDMR4G 功能描述:TVS二极管阵列 4 CHAN LOW CAP ESD RoHS:否 制造商:Littelfuse 极性: 通道:4 Channels 击穿电压: 钳位电压:11.5 V 工作电压:2.5 V 峰值浪涌电流:20 A 安装风格:SMD/SMT 端接类型:SMD/SMT 系列: 最小工作温度:- 40 C 最大工作温度:+ 85 C
ESD-R-10D 制造商:KEMET Corporation 功能描述:Ferrite Toroid Core EMI 5mm 制造商:KEMET Corporation 功能描述:EMI CORE (9.5X5-10MM) - Bulk 制造商:KEMET Corporation 功能描述:FERRITE CORE TOROIDAL 5MM X 制造商:KEMET Corporation 功能描述:Ferrite Toroids / Ferrite Rings 5mm